JAN4N24A
| Model | JAN4N24A |
| Description | JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS |
| PDF file | Total 3 pages (File size: 90K) |
| Chip Manufacturer | MII |
4N22A
4N23A
4N24A
JAN, JANTX, JANTXV,
SINGLE CHANNEL OPTOCOUPLERS
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
•
•
•
•
•
•
Collector is electrically isolated from the case.
Overall current gain...1.5 typical (4N24A)
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The
4N22A, 4N23A
and
4N24A
can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANS, JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................
±
1kV
Emitter-Collector Voltage..............................................................................................................................................................4V
Collector-Emitter Voltage............................................................................................................................................................35V
Collector-Base Voltage ...............................................................................................................................................................35V
Reverse Input Voltage .................................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA
Peak Forward Input Current (Value applies for tw
<
1
µ
s, PRR
<
300 pps) .................................................................................1A
Continuous Collector Current ................................................................................................................................................. 50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW
Storage Temperature............................................................................................................................................. -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.
Package Dimensions
* JEDEC registered data
Schematic Diagram
0.040 [1.02]
MAX.
0.305 [7.75]
0.335 [8.51]
6 LEADS
5
6
7
2
1
C
3
0.016Ø [0.41]
0.019Ø [0.48]
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
0.022Ø [5.08]
3
0.045 [1.14]
0.029 [0.73]
5
A
E
1
45°
0.034 [0.864]
0.028 [0.711]
TO5
7
K
B
2
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microropac.com
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