JANHCB1N5531B
| Model | JANHCB1N5531B |
| Description | Zener Diode, 11V V(Z), 5%, 0.5W, Silicon, Unidirectional, DIE-2 |
| PDF file | Total 19 pages (File size: 144K) |
| Chip Manufacturer | CDI-DIODE |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 18 January 2005.
INCH POUND
MIL-PRF-19500/437E
18 October 2004
SUPERSEDING
MIL-PRF-19500/437D
15 September 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,
1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1,
1N5518BUR-1, 1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1
JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance
are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance
for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).
1.2 Physical dimensions. See figures 1 (DO-7 and DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).
* 1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:
a.
PT = 500 mW (DO-7 and D0-35) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or
diode body to heat sink at L = .375 inch (9.53 mm). (Derate IZ to 0.0 mA dc at +175°C).
PT = 500 mW (D0-213AA) at TEC = +125°C. (Derate to 0 at +175°C).
-65°C
≤
TJ
≤
+175°C; -65°C
≤
TSTG
≤
+175°C.
b.
c.
* 1.4 Primary electrical characteristics. Primary electrical characteristic see 3.8 herein and as follows:
a.
b.
c.
d.
3.3 V dc
≤
Vz
≤
33 V dc.
R
θJL
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (D0-7 and D0-35).
R
θJEC
= 100°C/W (maximum) junction to end-caps (D0-213AA).
For derating see figures 4 and 5.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
AMSC N/A
FSC 5961
