JANS1N6129AUS
| Model | JANS1N6129AUS |
| Description | Trans Voltage Suppressor Diode, 500W, 69.2V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 |
| PDF file | Total 4 pages (File size: 40K) |
| Chip Manufacturer | SEMTECH |
1N6102US thru 1N6137US
1N6103AUS thru 1N6137AUS
500W Bipolar Transient Voltage Suppressor Surface Mount (US)
POWER DISCRETES
Description
Quick reference data
V
BR MIN
= 6.12 -180V
V
RWM
= 5.2 - 152V
V
C
(max) = 11 - 273V
I
(BR)
1N6102 - 1N6137 = 5mA - 175mA
Features
Low dynamic impedance
Hermetically sealed non-cavity construction
500 watt peak pulse power
1.5W continuous
These products are qualified to MIL-PRF-19500/516
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX,
JANTXV and JANS versions.
Electrical Specifications
Electrical specifications @ T
A
= 25°C unless otherwise specified.
Device
Type
Minimum
Breakdow n
Voltage
V
(BR)
@ I
(BR)
Volts
Test
Working
Current Pk. Reverse
I
(BR)
Voltage
V
RWM
mA
175
175
175
150
150
150
150
125
125
125
125
100
100
100
100
75
75
75
75
Volts
5.2
5.7
5.7
6.2
6.2
6.9
6.9
7.6
7.6
8.4
8.4
9.1
9.1
9.9
9.9
11.4
11.4
12.2
12.2
Maximum
Reverse
Current
I
R1
µA
100
50
50
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
1
Maximum
Clamping
Voltage
V
C
@ I
P
Volts
11.0
11.8
11.2
12.7
12.1
14.0
13.4
15.2
14.5
16.3
15.6
17.7
16.9
19.0
18.2
21.9
21.0
23.4
22.3
Maximum
Pk. Pulse
Current I
P
T
P
= 1mS
Amps
45.4
42.4
44.6
39.4
41.3
35.7
37.3
32.9
34.5
30.7
32.0
28.2
29.6
26.3
27.5
22.8
23.8
21.4
22.4
Temp.
Coeff. of
V
(BR)
α
(VZ)
% °C
/
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.08
Maximum
Reverse
Current
I
R2
@ 150°C
µA
4,000
750
750
500
500
300
300
200
200
200
200
150
150
150
150
100
100
100
100
www.semtech.com
1N6102
1N6103
1N6103A
1N6104
1N6104A
1N6105
1N6105A
1N6106
1N6106A
1N6107
1N6107A
1N6108
1N6108A
1N6109
1N6109A
1N6110
1N6110A
1N6111
1N6111A
6.12
6.75
7.13
7.38
7.79
8.19
8.65
9.0
9.50
9.9
10.45
10.8
11.4
11.7
12.35
13.5
14.25
14.4
15.2
Revision: February 2010
