JANS2N2222AUB/TR
| Model | JANS2N2222AUB/TR |
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, |
| PDF file | Total 2 pages (File size: 59K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
Devices
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
Qualified Level
JAN
JANTX
JANTXV
JANS
JANHC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
2N2221A, L; 2N2222A, L
(1)
2N2221AUA; 2N2222AUA
(2)
2N2221AUB; 2N2222AUB
(1)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
,
T
stg
Symbol
R
θ
JA
All Types
50
75
6.0
800
0.5
0.65
0.50
-65 to +200
Max.
325
210
325
Unit
Vdc
Vdc
Vdc
mAdc
W
TO-18* (TO-206AA)
2N2221A, 2N2222A
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
2N2221A, L; 2N2222A, L
2N2221AUA; 2N2222AUA
2N2221AUB; 2N2222AUB
1) Derate linearly 3.08 mW/
0
C above T
A
> +37.5
0
C
2) Derate linearly 4.76 mW/
0
C above T
A
> +63.5
0
C
Unit
0
4 PIN*
2N2221AUA, 2N2222AUA
C/W
3 PIN*
2N2221AUB, 2N2222AUB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
50
10
10
10
10
50
Max.
Unit
Vdc
µAdc
ηAdc
µAdc
ηAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 75 Vdc
V
CB
= 60 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
Collector-Base Cutoff Current
V
CE
= 50 Vdc
I
EBO
I
CES
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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