JANSG2N7268U
| Model | JANSG2N7268U |
| Description | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) |
| PDF file | Total 12 pages (File size: 287K) |
| Chip Manufacturer | IRF |
PD - 90720C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRHN7150
IRHN3150
IRHN4150
IRHN8150
Radiation Level R
DS(on)
100K Rads (Si) 0.065Ω
300K Rads (Si) 0.065Ω
600K Rads (Si) 0.065Ω
1000K Rads (Si) 0.065Ω
HEXFET
®
I
D
34A
34A
34A
34A
IRHN7150
JANSR2N7268U
100V, N-CHANNEL
REF: MIL-PRF-19500/603
®
RAD Hard HEXFET
TECHNOLOGY
™
QPL Part Number
JANSR2N7268U
JANSF2N7268U
JANSG2N7268U
JANSH2N7268U
SMD-1
International Rectifier’s RADHard
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 ( for 5s)
2.6 (Typical )
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
02/01/01
