JANSG2N7479U3
| Model | JANSG2N7479U3 |
| Description | Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| PDF file | Total 8 pages (File size: 131K) |
| Chip Manufacturer | IRF |
PD - 93751D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57Z30 100K Rads (Si) 0.020Ω
IRHNJ53Z30 300K Rads (Si) 0.020Ω
IRHNJ54Z30
500K Rads (Si)
0.020Ω
IRHNJ58Z30 1000K Rads (Si) 0.025Ω
TM
IRHNJ57Z30
JANSR2N7479U3
30V, N-CHANNEL
REF: MIL-PRF-19500/703
5
TECHNOLOGY
I
D
QPL Part Number
22A* JANSR2N7479U3
22A* JANSF2N7479U3
22A* JANSG2N7479U3
22A* JANSH2N7479U3
SMD-0.5
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
04/25/06
