JANSH2N7480U3
| Model | JANSH2N7480U3 |
| Description | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| PDF file | Total 8 pages (File size: 191K) |
| Chip Manufacturer | IRF |
PD-93752C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57034 100K Rads (Si)
IRHNJ53034 300K Rads (Si)
IRHNJ54034
600K Rads (Si)
IRHNJ58034 1000K Rads (Si)
TM
IRHNJ57034
JANSR2N7480U3
60V, N-CHANNEL
REF: MIL-PRF-19500/703
5
TECHNOLOGY
R
DS(on)
0.030Ω
0.030Ω
0.030Ω
0.038Ω
I
D
QPL Part Number
22A* JANSR2N7480U3
22A* JANSF2N7480U3
22A* JANSG2N7480U3
22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
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Single Event Effect (SEE) Hardened
Ultra low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
300 (for 5s)
1.0 (Typical)
22*
21
88
75
0.6
±20
100
22
7.5
10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
06/16/04
