JANSL2N3637UB
| Model | JANSL2N3637UB |
| Description | Small Signal Bipolar Transistor, |
| PDF file | Total 3 pages (File size: 48K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
DEVICES
LEVELS
2N3634
2N3634L
2N3634UB
2N3635
2N3635L
2N3635UB
2N3636
2N3636L
2N3636UB
2N3637
2N3637L
2N3637UB
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
UB:
@ T
A
= +25°C
@ T
C
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
**
T
J
, T
stg
2N3634* 2N3636*
2N3635* 2N3637*
140
140
5.0
1.0
1.0
5.0
1.5
-65 to +200
175
175
5.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
W
W
W
°C
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
Operating & Storage Junction Temperature Range
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N3634, 2N3635
2N3636, 2N3637
Collector-Base Cutoff Current
V
CB
= 100Vdc
V
CB
= 140Vdc
V
CB
= 175Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0Vdc
V
EB
= 5.0Vdc
Collector-Emitter cutoff Current
V
CE
= 100Vdc
V
(BR)CEO
140
175
100
10
10
50
10
10
Vdc
Symbol
Min.
Max.
Unit
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
2N3634, 2N3635
2N3636, 2N3637
I
CBO
ηAdc
μAdc
μAdc
ηAdc
μAdc
μAdc
I
EBO
I
CEO
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
T4-LDS-0065 Rev. 1 (081247)
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