JANSM2N2222A
| Model | JANSM2N2222A |
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN |
| PDF file | Total 3 pages (File size: 65K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
JANSG – 500K Rads (Si)
JANSH – 1MEG Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
P
T
0.5
0.65
0.50
-65 to +200
W
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
75
6.0
800
Unit
Vdc
Vdc
Vdc
mAdc
TO-18 (TO-206AA)
2N2221A, 2N2222A
Operating & Storage Junction Temperature Range
T
op
, T
stg
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
1.
2.
2N2222A, L
2N2222AUA
2N2222AUB, UBC
R
θJA
325
210
325
°C/W
Symbol
Max.
Unit
4 PIN
2N2221AUA, 2N2222AUA
Derate linearly 3.08 mW/°C above T
A
> +37.5°C
Derate linearly 4.76 mW/°C above T
A
> +63.5°C
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
T4-LDS-0042 Rev. 2 (080857)
Page 1 of 3
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 JANSM2N2222AL
|
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN | MICROSEMI | Preview |
