JANSP2N2906AL/TR
| Model | JANSP2N2906AL/TR |
| Description | Small Signal Bipolar Transistor, |
| PDF file | Total 6 pages (File size: 100K) |
| Chip Manufacturer | MICROSEMI |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES
LEVELS
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907AUBC
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T (1)
T
op
, T
stg
Value
60
60
5.0
600
0.5
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-18 (TO-206AA)
2N2906A, 2N2907A
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
1. See MIL-PRF-19500/291 for derating curves.
Symbol
R
θJA
(1)
Max.
325
Unit
°C/W
4 PIN
2N2906AUA, 2N2907AUA
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 50Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
I
EBO
10
50
50
μAdc
ηAdc
ηAdc
I
CBO
10
10
μAdc
ηAdc
V
(BR)CEO
60
Vdc
Symbol
Min.
Max.
Unit
3 PIN
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
I
CES
T4-LDS-0055 Rev. 4 (100247)
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