JANSR2N7261
| Model | JANSR2N7261 |
| Description | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| PDF file | Total 12 pages (File size: 293K) |
| Chip Manufacturer | IRF |
PD - 90653B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
100Volt, 0.18Ω, MEGA RAD HARD HEXFET
Ω
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x10
6
Rads(Si). Under
identical
pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
IRHF7130
IRHF8130
JANSR2N7261
JANSH2N7261
N CHANNEL
Product Summary
Part Number
IRHF7130
IRHF8130
MEGA RAD HARD
BV
DSS
100V
100V
R
DS(on)
0.18Ω
0.18Ω
I
D
8.0A
8.0A
Features:
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
8.0
5.0
32
25
0.20
±20
130
5.5
-55 to 150
Pre-Irradiation
IRHF7130, IRHF8130
Units
A
W
W/°C
V
mJ
V/ns
o
C
g
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
www.irf.com
1
10/14/98
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