J/SST111
| Model | J/SST111 |
| Description | N-Channel JFETs |
| PDF file | Total 6 pages (File size: 53K) |
| Chip Manufacturer | VISHAY |
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Gate Output Admittance
100
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
I
D
– Drain Current (mA)
b
og
10
(mS)
100
Output Characteristics
V
GS(off)
= –4 V
80
60
V
GS
= 0 V
–0.5
g
og
1
40
–1.0
–1.5
20
–2.0
–2.5
0.1
100
200
500
1000
0
0
2
4
6
8
10
f – Frequency (MHz)
V
DS
– Drain-Source Voltage (V)
Output Characteristics
40
V
GS(off)
= –4 V
32
I
D
– Drain Current (mA)
V
GS
= 0 V
24
–0.5
–1.0
16
–1.5
–2.0
8
–2.5
–3.0
0
0
0.2
0.4
0.6
0.8
1.0
0
0
–1
I
D
– Drain Current (mA)
80
100
Transfer Characteristics
V
GS(off)
= –4 V
V
DS
= 20 V
T
A
= –55_C
60
25_C
40
20
125_C
–2
–3
–4
–5
V
DS
– Drain-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
SWITCHING TIME TEST CIRCUIT
J/SST111
V
GS(L)
R
L
*
I
D(on)
*Non-inductive
–12 V
800
W
12 mA
V
DD
J/SST112
–7 V
1600
W
6 mA
J/SST113
–5 V
3200
W
3 mA
R
L
OUT
V
GS(H)
V
GS(L)
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
V
GS
Scope
1
kW
51
W
51
W
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-5
