J/SST112
| Model | J/SST112 |
| Description | N-Channel JFETs |
| PDF file | Total 6 pages (File size: 53K) |
| Chip Manufacturer | VISHAY |
J/SST111 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
r
DS(on)
– Drain-Source On-Resistance (
Ω )
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
100
I
DSS
– Saturation Drain Current (mA)
On-Resistance vs. Drain Current
T
A
= 25° C
r
DS
@
I
D
=
1 mA
,
V
GS
= 0
I
DSS
@
V
DS
=
20 V, V
GS
= 0
80
I
DSS
120
160
80
V
GS(off)
= –2 V
60
60
r
DS
40
80
40
–4 V
–8 V
20
40
20
0
0
–2
–4
–6
–8
–10
0
0
1
10
I
D
– Drain Current (mA)
100
V
GS(off)
– Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 1 mA
r
DS
changes X 0.7%/_C
160
4
Switching Time (ns)
5
Turn-On Switching
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50
Ω
V
GS(L)
= –10 V
t
r
120
V
GS(off)
= –2 V
3
t
d(on)
@
I
D
= 12 mA
2
80
–4 V
–8 V
40
1
t
d(on)
@
I
D
= 3 mA
0
–55 –35
–15
5
25
45
65
85
105
125
T
A
– Temperature ( _C)
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
Turn-Off Switching
30
t
d(off)
independent of device V
GS(off
)
V
DD
= 5 V, V
GS(L)
= –10 V
24
Switching Time (ns)
Capacitance (pF)
24
30
Capacitance vs. Gate-Source Voltage
f = 1 MHz
18
t
f
@
V
GS(off)
= –2 V
18
12
t
d(off)
6
t
f
@
V
GS(off)
= –8 V
0
0
2
4
6
8
10
I
D
– Drain Current (mA)
12
C
iss
@ V
DS
= 0 V
6
C
rss
@ V
DS
= 0 V
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
www.vishay.com
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
7-3
