K1S1616B1A-BI85
| Model | K1S1616B1A-BI85 |
| Description | 1Mx16 bit Uni-Transistor Random Access Memory |
| PDF file | Total 10 pages (File size: 182K) |
| Chip Manufacturer | SAMSUNG |
K1S1616B1A
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.2 to Vcc-0.2V
Input rising and falling time: 5ns
Input and output reference voltage: 0.5 x V
CC
Output load (See right): C
L
=50pF
C
L
Dout
Preliminary
UtRAM
1. Including scope and jig capacitance
AC CHARACTERISTICS
(Vcc=1.7~2.1V, T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Read
Chip Select to Low-Z Output
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. t
WP
(min)=70ns for continuous write operation over 50 times.
70ns
Max
-
70
70
35
70
-
-
-
25
25
25
-
-
-
-
-
-
-
-
25
-
-
-
Min
85
-
-
-
-
10
10
5
0
0
0
5
85
70
0
70
70
60
1)
0
0
35
0
5
85ns
Max
-
85
85
40
85
-
-
-
25
25
25
-
-
-
-
-
-
-
-
25
-
-
-
Units
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
BLZ
t
OLZ
t
HZ
t
BHZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
BW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
-
10
10
5
0
0
0
5
70
60
0
60
60
55
1)
0
0
30
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-6-
Revision 0.0
October 2003
