K1S1616B1A-I
| Model | K1S1616B1A-I |
| Description | 1Mx16 bit Uni-Transistor Random Access Memory |
| PDF file | Total 10 pages (File size: 182K) |
| Chip Manufacturer | SAMSUNG |
K1S1616B1A
PRODUCT LIST
Industrial Temperature Products(-40~85°C)
Part Name
K1S1616B1A-FI70
K1S1616B1A-FI85
K1S1616B1A-BI70
1)
K1S1616B1A-BI85
1)
1. Lead Free Product
Preliminary
UtRAM
Function
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
48-FBGA-6.00x7.00, 70ns
48-FBGA-6.00x7.00, 85ns
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
1. T
A
=-40 to 85°C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤20ns.
3. Undershoot: -1.0V in case of pulse width
≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Symbol
Vcc
Vss
V
IH
V
IL
Min
1.7
0
1.4
-0.2
3)
Typ
1.8/2.0
0
-
-
Max
2.1
0
V
CC
+0.3
2)
0.4
Unit
V
V
V
V
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Symbol
Test Conditions
V
IN
=Vss to Vcc
CS1=V
IH
or CS2=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
Cycle time=1µs, 100% duty, I
IO
=0mA, CS1≤0.2V, LB≤0.2V
or/and UB≤0.2V, CS2
≥
V
CC
-
0.2V, V
IN
≤0.2V
or V
IN
≥
V
CC
-
0.2V
Cycle time=Min, I
IO
=0mA
,
100% duty, CS1=V
IL,
CS2
=
V
IH
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
I
OL
= 0.1mA
I
OH
= -0.1mA
Other inputs=0~Vcc
1) CS1≥V
CC
-0.2V
,
CS2
≥
V
CC
-
0.2V(CS1 controlled) or
2) 0V
≤
CS2
≤
0.2V(CS2 controlled)
Min
-1
-1
-
-
-
1.4
-
Typ
-
-
-
-
-
-
-
Max Unit
1
1
5
25
0.2
-
80
µA
µA
mA
mA
V
V
µA
I
LI
I
LO
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(CMOS)
V
OL
V
OH
I
SB1
-5-
Revision 0.0
October 2003
