K1S1616B1A
| Model | K1S1616B1A |
| Description | 1Mx16 bit Uni-Transistor Random Access Memory |
| PDF file | Total 10 pages (File size: 182K) |
| Chip Manufacturer | SAMSUNG |
K1S1616B1A
FUNCTIONAL DESCRIPTION
CS1
H
X
1)
X
1)
L
L
L
L
L
L
L
L
CS2
X
1)
L
X
1)
H
H
H
H
H
H
H
H
OE
X
1)
X
1)
X
1)
H
H
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
X
1)
X
1)
H
H
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
X
1)
L
H
L
L
H
L
UB
X
1)
X
1)
H
X
1)
L
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Preliminary
UtRAM
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.2 to V
CC
+0.3V
-0.2 to 2.5V
1.0
-65 to 150
-40 to 85
Unit
V
V
W
°C
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
-4-
Revision 0.0
October 2003
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