K1S1616BCA-BI850
| Model | K1S1616BCA-BI850 |
| Description | Pseudo Static RAM, 1MX16, 85ns, CMOS, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, FBGA-48 |
| PDF file | Total 10 pages (File size: 187K) |
| Chip Manufacturer | SAMSUNG |
Preliminary
K1S1616BCA
1M x 16 bit Page Mode Uni-Transistor CMOS RAM
FEATURES
•
•
•
•
•
UtRAM
GENERAL DESCRIPTION
The K1S1616BCA is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
support 4 page mode operation, Industrial temperature range
and 48 ball Chip Scale Package for user flexibility of system
design. The device also supports deep power down mode for
low standby current.
Process Technology: CMOS
Organization: 1M x16 bit
Power Supply Voltage: 1.7~2.1V
Three State Outputs
Compatible with Low Power SRAM
•
Support 4 page read mode
•
Package Type: 48-FBGA-6.00x7.00
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
70/85ns
Power Dissipation
Standby
(I
SB1
, Max.)
80µA
Operating
(I
CC2
, Max.)
30mA
PKG Type
K1S1616BCA-I
Industrial(-40~85°C)
1.7~2.1V
48-FBGA-6.00x7.00
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
CS2
Vcc
Vss
B
I/O9
UB
A3
A4
CS1
I/O1
Row
Addresses
Row
select
Memory array
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
I/O
1
~I/O
8
E
Vcc
I/O13
NC
A16
I/O5
Vss
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
H
A18
A8
A9
A10
A11
NC
CS1
CS2
OE
WE
UB
48-FBGA: Top View(Ball Down)
Control Logic
Name
Function
Name
Vcc
Vss
UB
LB
NC
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
No Connection
1)
LB
CS1,CS2 Chip Select Inputs
OE
WE
A
0
~A
19
Output Enable Input
Write Enable Input
Address Inputs
I/O
1
~I/O
16
Data Inputs/Outputs
1) Reserved for future use
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 0.0
December 2003
