K1S32161CC-FI70
| Model | K1S32161CC-FI70 |
| Description | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| PDF file | Total 10 pages (File size: 188K) |
| Chip Manufacturer | SAMSUNG |
Preliminary
K1S32161CC
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load: C
L
=50pF
C
L
1. Including scope and jig capacitance
UtRAM
Dout
AC CHARACTERISTICS
(Vcc=2.7~3.1V, T
A
=-40 to 85°C)
Speed Bin
Parameter List
Symbol
Min
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
UB, LB Access Time
Chip Select to Low-Z Output
Read
UB, LB Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
UB, LB Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Page Cycle
Page Access Time
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
UB, LB Valid to End of Write
Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
1. t
WP
(min) =70ns for continuous write operation over 50 times.
70ns
1)
Max
-
70
70
35
70
-
-
-
25
25
25
-
-
20
-
-
-
-
-
-
-
25
-
-
-
Units
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
BLZ
t
OLZ
t
HZ
t
BHZ
t
OHZ
t
OH
t
PC
t
PA
t
WC
t
CW
t
AS
t
AW
t
BW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
-
10
10
5
0
0
0
5
25
-
70
60
0
60
60
55
1)
0
0
30
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-6-
Revision 0.0
July 2003
