K1S3216B1C-I
| Model | K1S3216B1C-I |
| Description | 2Mx16 bit Uni-Transistor Random Access Memory |
| PDF file | Total 10 pages (File size: 183K) |
| Chip Manufacturer | SAMSUNG |
Preliminary
K1S3216B1C
2M x 16 bit Uni-Transistor CMOS RAM
FEATURES
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UtRAM
GENERAL DESCRIPTION
The K1S3216B1C is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
supports Industrial temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports dual chip selection for user interface.
Process Technology: CMOS
Organization: 2M x16 bit
Power Supply Voltage: 1.7V~2.1V
Three State Outputs
Compatible with Low Power SRAM
Dual Chip selection support
•
Package Type: 48-FBGA-6.0x8.0
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temp.
Vcc Range
Speed
Standby
(I
SB1
, Max.)
100µA
Operating
(I
CC2
, Max.)
30mA
PKG Type
K1S3216B1C-I
Industrial(-40~85°C)
1.7V~2.1V
70/85ns
48-FBGA-6.0x8.0
PIN DESCRIPTION
1
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
A
LB
OE
A0
A1
A2
CS
2
Vcc
Vss
B
I/O9
UB
A3
A4
CS
1
I/O1
Row
Addresses
Row
select
Memory array
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
Vss
I/O12
A17
A7
I/O4
Vcc
I/O
1
~I/O
8
E
Vcc
I/O13
NC
A16
I/O5
Vss
I/O
9
~I/O
16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
Column Addresses
H
A18
A8
A9
A10
A11
A20
CS
1
CS
2
OE
WE
UB
LB
48-FBGA: Top View(Ball Down)
Control Logic
Name
CS
1
,CS
2
OE
WE
A
0
~A
20
Function
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Name
Vcc
Vss
UB
LB
NC
Function
Power
Ground
Upper Byte(I/O
9
~
16
)
Lower Byte(I/O
1
~
8
)
No Connection
1)
I/O
1
~I/O
16
Data Inputs/Outputs
1) Reserved for future use.
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
-2-
Revision 0.1
June 2003
