K4E660812B
| Model | K4E660812B |
| Description | 8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| PDF file | Total 21 pages (File size: 419K) |
| Chip Manufacturer | SAMSUNG |
K4E660812B, K4E640812B
CMOS DRAM
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor-
mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden
refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using
Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E660812B-JC/L(3.3V, 8K Ref., SOJ)
- K4E640812B-JC/L(3.3V, 4K Ref., SOJ)
- K4E660812B-TC/L(3.3V, 8K Ref., TSOP)
- K4E640812B-TC/L(3.3V, 4K Ref., TSOP)
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
•
Active Power Dissipation
Unit : mW
Speed
-45
-50
-60
•
Refresh Cycles
Part
NO.
K4E660812B*
K4E640812B
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
L-ver
128ms
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V±0.3V power supply
4K
468
432
396
8K
360
324
288
FUNCTIONAL BLOCK DIAGRAM
Refresh Control
Refresh Counter
Memory Array
8,388,608 x 8
Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
¡
Ü
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ7
Data out
Buffer
OE
Performance Range
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
74ns
84ns
104ns
t
HPC
17ns
20ns
25ns
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
