K4F170411C
| Model | K4F170411C |
| Description | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
| PDF file | Total 20 pages (File size: 226K) |
| Chip Manufacturer | SAMSUNG |
K4F170411C, K4F160411C
K4F170412C, K4F160412C
CMOS DRAM
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power con-
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer.
FEATURES
• Part Identification
- K4F170411C-B(F) (5V, 4K Ref.)
- K4F160411C-B(F) (5V, 2K Ref.)
- K4F170412C-B(F) (3.3V, 4K Ref.)
- K4F160412C-B(F) (3.3V, 2K Ref.)
•
Active Power Dissipation
Unit : mW
Speed
4K
-50
-60
324
288
3.3V
2K
396
360
4K
495
440
5V
2K
605
550
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)
•
Refresh Cycles
Part
NO.
K4F170411C
K4F170412C
K4F160411C
K4F160412C
V
CC
5V
3.3V
5V
3.3V
2K
32ms
Refresh
cycle
4K
Refresh period
Nor-
64ms
128ms
L-ver
RAS
CAS
W
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
VBB Generator
Data in
Refresh Timer
Refresh Control
Refresh Counter
Memory Array
4,194,304 x 4
Cells
Row Decoder
Sense Amps & I/O
Buffer
•
Performance Range
Speed
-50
-60
DQ0
to
DQ3
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
A0-A11
(A0 - A10)
*1
A0 - A9
(A0 - A10)
*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Data out
Buffer
OE
Note)
*1
: 2K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 K4F170411C-B
|
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | SAMSUNG | Preview |
|
K4F170411C-F
|
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode | SAMSUNG | Preview |
|
K4F170411C-FL60
|
Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 | SAMSUNG | Preview |
