K4F170811D-BL600
| Model | K4F170811D-BL600 |
| Description | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 |
| PDF file | Total 20 pages (File size: 226K) |
| Chip Manufacturer | SAMSUNG |
K4F170811D, K4F160811D
K4F170812D, K4F160812D
CMOS DRAM
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power con-
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
• Part Identification
- K4F170811D-B(F) (5V, 4K Ref.)
- K4F160811D-B(F) (5V, 2K Ref.)
- K4F170812D-B(F) (3.3V, 4K Ref.)
- K4F160812D-B(F) (3.3V, 2K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
Unit : mW
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply (5V product)
2K
605
550
• Single +3.3V±0.3V power supply (3.3V product)
•
Active Power Dissipation
3.3V
4K
-50
-60
324
288
2K
396
360
4K
495
440
5V
Speed
FUNCTIONAL BLOCK DIAGRAM
•
Refresh Cycles
Part
NO.
K4F170811D
K4F170812D
K4F160811D
K4F160812D
V
CC
5V
3.3V
5V
3.3V
2K
32ms
Refresh Control
Refresh Counter
Memory Array
2,097,152 x 8
Cells
Refresh Refresh period
cycle
Normal
L-ver
4K
64ms
128ms
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
Data in
Refresh Timer
Row Decoder
Sense Amps & I/O
Buffer
•
Performance Range
Speed
-50
-60
DQ0
to
DQ7
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Remark
5V/3.3V
5V/3.3V
A0-A11
(A0 - A10)
*1
A0 - A8
(A0 - A9)
*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Data out
Buffer
OE
Note)
*1
: 2K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
