KYZ25K1
| Model | KYZ25K1 |
| Description | Silicon Press-Fit-Diodes |
| PDF file | Total 2 pages (File size: 183K) |
| Chip Manufacturer | DIOTEC |
KYZ 25A05 ... KYZ 25A6
KYZ 25K05 ... KYZ 25K6
Silicon Press-Fit-Diodes
Silizium-Einpreßdioden
Nominal current – Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal press-fit case with glass seal
Metall-Einpreßgehäuse mit Glasdurchführung
Weight approx. – Gewicht ca.
Dimensions / Maße in mm
25 A
50…600 V
10 g
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type / Typ
Wire to / Draht an
Anode
Cathode
KYZ 25A05
KYZ 25A1
KYZ 25A2
KYZ 25A3
KYZ 25A4
KYZ 25A6
KYZ 25K05
KYZ 25K1
KYZ 25K2
KYZ 25K3
KYZ 25K4
KYZ 25K6
Repetitive peak reverse voltage
Periodische Spitzensperrspanng.
V
RRM
[V]
50
100
200
300
400
600
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
60
120
240
360
480
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50 / 60 Hz half sine-wave
Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t <10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Maximum pressure – Maximaler Einpreßdruck
T
C
= 100
/
C
f > 15 Hz
T
A
= 25
/
C
T
A
= 25
/
C
I
FAV
I
FRM
I
FSM
i
2
t
T
j
T
S
25 A
80 A
1
)
270 / 300 A
375 A
2
s
– 50...+175
/
C
– 50...+175
/
C
7 kN
1
86
) Max. case temperature T
C
= 150
/
C – Max. Gehäusetemperatur T
C
= 150
28.02.2002
