LL5817F1
| Model | LL5817F1 |
| Description | Rectifier Diode, |
| PDF file | Total 3 pages (File size: 511K) |
| Chip Manufacturer | YANGJIE |
LL5817 THRU LL5819
Schottky Rectifier
DO-213AB(MELF)
.022(0.56)
.018(0.46)
Solderable Ends
RoHS
COMPLIANT
Mounting Pad Layout
0.079(2.0)
.102(2.60)
.087(2.20)
.106(2.70)
.090(2.30)
0.197(5.0)
0.118(3.0)
Features
●
I
o
1.0A
●
VRRM 20V-40V
●
High surge current capability
Applications
● Rectifier
.205(5.20)
.185(4.70)
Dimensions in inches and (millimeters)
■
Limiting Values (Absolute Maximum Rating)
Item
Repetitive
Voltage
Peak
Reverse
Symbol
V
RRM
Unit
V
Conditions
17
20
LL58
18
30
19
40
Average Forward Current
I
F(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=80℃
1.0
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I
FSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
25
T
J
T
STG
℃
℃
-55~+125
-55 ~ +150
■
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Peak Forward
Voltage
Peak Reverse
Current
Thermal
Resistance(Typic
al)
Symbol
V
FM
I
RRM1
I
RRM2
R
θJ-A
Unit
V
Test Condition
I
FM
=1.0A
Ta=25℃
Ta=125℃
Max
LL58
17
0.45
18
0.55
1.0
10
80
19
0.6
mA
℃/W
V
RM
=V
RRM
Between junction and ambient
1/3
S-S549
Rev. 2.0,10-Aug-15
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
