MMBD6100
| Model | MMBD6100 |
| Description | MONOLITHIC DUAL SWITCHING DIODE |
| PDF file | Total 2 pages (File size: 53K) |
| Chip Manufacturer | ZOWIE |
Zowie Technology Corporation
Monolithic Dual Switching Diode
3
ANODE
1
2
ANODE
MMBD6100
CATHODE
1
2
3
SOT-23
MAXIMUM RATINGS
Rating
Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM( surge )
Value
70
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,
(2)
T
A
=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
o
o
Symbol
P
D
R
JA
P
D
R
JA
T
J,
T
STG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW /
o
C
o
C/W
mW
mW /
o
C
o
C/W
o
C
DEVICE MARKING
MMBD6100=5BM
ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
Max.
Unit
o
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( I
BR
=100uAdc )
V
(BR)
70
-
Vdc
Forward Voltage
( I
F
=1.0 mAdc )
( I
F
=100 mAdc )
V
F
550
850
700
1100
mVdc
Reverse Voltage Leakage Current (V
R
=50 Vdc )
I
R
-
-
0.1
uAdc
Diode Capacitance
( V
R
=0, f=1.0MH
Z
)
C
J
-
2.5
pF
Reverse Recovery Time
( I
F
=I
R
=10 mAdc, I
R
(REC)=1.0mAdc )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
trr
-
4.0
nS
Zowie Technology Corporation
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