N0392WC160
| Model | N0392WC160 |
| Description | Silicon Controlled Rectifier, 776A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, |
| PDF file | Total 10 pages (File size: 126K) |
| Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
Characteristics
N0392WC120 to N0392WC160
PARAMETER
V
TM
V
0
r
S
dv/dt
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
Turn-off time
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
0.4
1.5
850
430
100
9.0
125
200
-
-
-
70
MAX. TEST CONDITIONS
(Note 1)
1.68
0.92
0.99
-
20
20
3.0
150
600
1.0
2.5
-
550
-
-
175
250
0.095
0.21
5.5
-
I
TM
=300A, t
p
=500µs, di/dt=20A/µs, V
r
=50V,
V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=300A, t
p
=500µs, di/dt=20A/µs, V
r
=50V,
V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
I
TM
=300A, t
p
=500µs, di/dt=20A/µs, V
r
=50V
V
D
=80% V
DRM
, linear ramp, gate o/c
Rated V
DRM
Rated V
RRM
T
j
=25°C, V
D
=10V, I
T
=2A
T
j
=25°C
V
D
=80%V
DRM
, I
TM
=500A, di/dt=10A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
I
TM
=770A
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
R
th(j-hs)
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes: -
1)
Unless otherwise indicated T
j
=125
°
C.
-
-
3.3
-
Data Sheet. Types N0392WC120 to N0392WC160 Issue 1.
Page 2 of 10
November, 2001
