N1063CZ63
| Model | N1063CZ63 |
| Description | Silicon Controlled Rectifier, 3930A I(T)RMS, 6300V V(DRM), 6300V V(RRM), 1 Element, 101A325, 3 PIN |
| PDF file | Total 8 pages (File size: 87K) |
| Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
Curves
Figure 1, Maximum on-state characteristic
10000
N1063xx53xxx to N1063xx65xxx
Figure 2, Transient thermal impedance
100
Tj=25°C
Single side cooled
Transient Thermal Impedance, Z(th)t (K/kW).
10
Double side cooled
Tj=115°C
On state current, I
T
, (A)
1000
1
0.1
N1063Cx53-65
99T01-Issue 2
N1063Cx53-65
99T01-issue 2
100
1
2
3
On state volt drop, V
T
, (V)
4
0.01
0.0001
0.001
0.01
0.1
1
Pulse width, tp (seconds).
10
100
Figure 3, Maximum non repetitive surge
100000
I t:V
RRM
=10V
2
Figure 4, Gate characteristics, 25°C
10
Max Peak Vg (rise time of Ig = 1µs)
Peak half sine surge current, I
FSM
(A) / [Maximum I
2
t (kA
2
s)].
Pg Max 30W
Pg d.c. 4W
I t:40%V
RRM
2
Igt,Vgt
Max Vg d.c.
125
o
C
-40
o
C
25
o
C
I
TSM
:V
RRM
=10V
10000
Gate voltage,V
G,
(Volts).
1
I
TSM
:40%V
RRM
Min Vg d.c.
Igd,Vgd
T
j(initial)
=115°C
Gate MayTemporarily Lose Control
1000
1.00E-03
N1063Cx53-65
99T01-Issue 2
1.00E+00
N1063Cx53-65
99T01-Issue 2
0.1
0.01
0.1
1
Gate current, I
G,
(Amperes).
10
1
1.00E-02
10
1
1.00E-01
5
10
50
1.00E+01
Duration of
surge (ms)
Duration of surge (Cycles @ 50 Hz)
Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01
page 5 of 8
December, 1999
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 N1063CZ63JOO
|
Silicon Controlled Rectifier, 3930A I(T)RMS, 6300V V(DRM), 6300V V(RRM), 1 Element, 101A325, 3 PIN | IXYS | Preview |
