N1083CZ55GOO
| Model | N1083CZ55GOO |
| Description | Silicon Controlled Rectifier, 4680A I(T)RMS, 5500V V(DRM), 5500V V(RRM), 1 Element, 101A322, 3 PIN |
| PDF file | Total 8 pages (File size: 81K) |
| Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
Curves
Figure 1, Maximum on-state characteristic
10000
N1083xx53xxx to N1083xx65xxx
Figure 2, Transient thermal impedance
100
Tj=25°C
Single side cooled
Tj=115°C
Transient thermal impedance, Z(th)t (K/kW).
10
On state current, IT, (Amperes)
Double side cooled
1000
1
0.1
N1083CH53-65
99T06- Issue 2
100
1
2
On state volt drop, VT, (Volts)
3
N1083CH53-65
99T06-Issue 2
0.01
0.0001
0.001
0.01
0.1
1
10
100
Pulse width, tp (seconds).
Figure 3, Maximum non repetitive surge
1000000
Figure 4, Gate characteristics, 25°C
10
Max Peak Vg (rise time of Ig = 1µs)
Peak half sine surge current, I
FSM
(A) / [Maximum I
2
t (kA
2
s)].
Pg Max 30W
I t:V
RRM
=10V
Igt,Vgt
100000
Gate voltage,V
G,
(Volts).
I t:40%V
RRM
2
2
Pg d.c. 4W
Max Vg d.c.
125
o
C
-40
o
C
25
o
C
1
I
TSM
:V
RRM
=10V
10000
I
TSM
:40%V
RRM
Min Vg d.c.
Igd,Vgd
T
j(initial)
=115°C
N1083CH53-65
Gate MayTemporarily Lose Control 99T06- Issue 2
1.00E-02
N1083CH53-65
99T06- Issue 2
0.1
0.01
0.1
1
Gate current, I
G,
(Amperes).
10
1000
1.00E-03
1
10
1
1.00E-01
5
10
1.00E+00
50
1.00E+01
Duration of
surge (ms)
Duration of surge (Cycles @ 50 Hz)
Types N1083xx53xxx to N1083xx65xxx Rating Report 99T06
page 5 of 8
December, 1999
