N1083CZ61HOO
Model | N1083CZ61HOO |
Description | Silicon Controlled Rectifier, 4680A I(T)RMS, 6100V V(DRM), 6100V V(RRM), 1 Element, 101A322, 3 PIN |
PDF file | Total 8 pages (File size: 81K) |
Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
Characteristics
CHARACTERISTICS
V
TM
V
0
R
T
Maximum peak on-state voltage.
Threshold voltage.
N1083xx53xxx to N1083xx65xxx
MIN
-
-
-
200
-
-
-
-
-
-
-
81
-
TYP
-
-
-
1000
-
-
-
-
-
-
-
-
2.80
MAX TEST CONDITIONS
2.10
1.23
0.29
2000
300
300
3.0
300
1000
9
18
98
-
V
D
=80% V
DRM
.
Rated V
DRM
, note 2.
Rated V
RRM
, note 2.
T
j
=25°C.
T
j
=25°C.
I
A
=3A
T
j
=25°C.
V
D
=10V,
I
T
=3000A.
UNITS
V
V
mΩ
V/µs
mA
mA
V
mA
mA
K/KW
K/KW
kN
kg
Slope resistance.
Critical rate of rise of off-state
dv/dt
voltage.
I
DRM
Peak off-state current.
I
RRM
V
GT
I
GT
I
H
R
θ
F
W
t
Peak reverse current.
Gate trigger voltage
Gate trigger current
Holding current
Thermal resistance junction to
sink.
Mounting force.
Weight.
Double side cooled.
Single side cooled.
Notes:-
1) Unless otherwise indicated T
j
=115
°
C.
2) Leakage current limit, this will be increased in the future to 600mA
Types N1083xx53xxx to N1083xx65xxx Rating Report 99T06
page 2 of 8
December, 1999