N1263CZ52HOO
| Model | N1263CZ52HOO |
| Description | Silicon Controlled Rectifier, 4880A I(T)RMS, 5200V V(DRM), 5200V V(RRM), 1 Element, 101A325, 3 PIN |
| PDF file | Total 8 pages (File size: 85K) |
| Chip Manufacturer | IXYS |
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Positive development in power electronics
Notes on Ratings and Characteristics
1 Voltage Grade Table
Voltage Grade 'H'
44
46
48
50
52
V
DSM
V
DRM
V
RRM
V
4400
4600
4800
5000
5200
V
RSM
V
4500
4700
4900
5100
5300
N1263xx43xxx to N1263xx52xxx
V
D
V
R
V
DC
.
2420
2530
2640
2750
2860
2 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
J
below 25
°C.
4 Repetitive dv/dt
Higher dv/dt selections are available up to 2000V/
µ
s on request.
5 Computer modelling parameters
5.1 Device dissipation calculations
I
AV
−
V
o
+
V
o
+
4
⋅
ff
2
⋅
r
s
⋅
W
AV
=
2
⋅
ff
2
⋅
r
s
2
Where
V
o
= 1.00 V,
r
s
= 0.250mΩ
W
AV
=
∆
T
R
th
∆
T
=
T
jMax
−
T
Hs
R
th
ff
= Supplementary thermal impedance, see table below.
= Form factor, see table below.
Supplementary Thermal Impedance (at 50Hz operating frequency)
Conduction Angle
6 phase (60°)
3 phase (120°)
Half wave (180°)
Square wave Double Side Cooled
0.0118
0.0115
0.0112
Square wave Single Side Cooled
0.0236
0.0230
0.0224
Sine wave Double Side Cooled
0.0116
0.0112
0.0101
Sine wave Single Side Cooled
0.0232
0.0224
0.0202
Form Factors
o
120
1.73
1.88
d.c.
0.0110
0.0220
Conduction Angle
Square wave
Sine wave
60
2.45
2.78
o
180
1.41
1.57
o
d.c.
1
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 3 of 8
December, 1999
