N1263DH50HOO
| Model | N1263DH50HOO |
| Description | Silicon Controlled Rectifier, 4880A I(T)RMS, 5000V V(DRM), 5000V V(RRM), 1 Element, 101A325, 3 PIN |
| PDF file | Total 8 pages (File size: 85K) |
| Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
Curves
Figure 1, Maximum on-state characteristic
10000
N1263xx43xxx to N1263xx52xxx
Figure 2, Transient thermal impedance
100
Tj=25°C
Double side cooled
Tj=125°C
Transient Thermal Impedance, Z(th)t (K/kW)
10
Single side cooled
On state current, IT, (Amperes)
1000
1
0.1
N1263CH43-52
99T07-Issue 2
100
1
2
On state volt drop, VT, (Volts)
3
0.01
0.0001
N1263CH43-52
99T07-Issue 2
0.001
0.01
0.1
1
Pulse width, tp (seconds).
10
100
Figure 3, Maximum non repetitive surge
1000000
Figure 4, Gate characteristics, 25°C
10
Max Peak Vg (rise time of Ig = 1µs)
Peak half sine surge current, I
FSM
(A) / [Maximum I
2
t (kA
2
s)].
Pg Max 30W
I
2
t:V
RRM
=10V
100000
Gate voltage,V
G,
(Volts).
I t:60%V
RRM
2
Pg d.c. 4W
Igt,Vgt
Max Vg d.c.
125
o
C
-40
o
C
25
o
C
1
I
TSM
:V
RRM
=10V
10000
I
TSM
:60%V
RRM
Min Vg d.c.
Igd,Vgd
T
j(initial)
=125°C
Gate MayTemporarily Lose Control
1000
1.00E-03
N1263CH43-52
99T07-Issue 2
1.00E+00
N1263CH43-52
99T07-Issue 2
0.1
0.01
0.1
1
Gate current, I
G,
(Amperes).
10
1
1.00E-02
10
1
1.00E-01
5
10
50
1.00E+01
Duration of
surge (ms)
Duration of surge (Cycles @ 50 Hz)
Types N1263xx43xxx to N1263xx52xxx Rat. Rep. 99T07
page 5 of 8
December, 1999
