N1265LS160
| Model | N1265LS160 |
| Description | Silicon Controlled Rectifier, 2431 A, 1600 V, SCR |
| PDF file | Total 12 pages (File size: 322K) |
| Chip Manufacturer | IXYS |
WESTCODE
An IXYS Company
Characteristics
Phase Control Thyristor Types N1265LS120 to N1265LS160
PARAMETER
V
TM
V
TM
V
T0
r
T
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rr
t
rr
t
q
Maximum peak on-state voltage
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time
MIN.
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
0.5
1.0
1500
950
100
19
220
350
-
-
-
340
MAX. TEST CONDITIONS
(Note 1)
1.40
1.98
0.883
0.297
-
60
60
3.0
300
0.25
1000
1.0
2.0
-
1050
-
-
-
-
0.032
0.064
20
-
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
Double side cooled
Single side cooled
Note 2.
I
TM
=1000A, t
p
=1000µs, di/dt=10A/µs,
V
r
=50V
V
D
=80% V
DRM
, linear ramp, gate o/c
Rated V
DRM
Rated V
RRM
T
j
=25°C
Rated V
DRM
T
j
=25°C
V
D
=67% V
DRM
, I
T
=1000A, di/dt=00A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
V
D
=10V, I
T
=3A
I
TM
=1700A
I
TM
=3700A
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
kN
g
(dv/dt)
cr
Critical rate of rise of off-state voltage
R
thJK
F
W
t
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
For other clamp forces, please consult factory.
-
-
10
-
Data Sheet. Types N1265LS120 to N1265LS160 Issue 2
Page 2 of 11
April, 2005
