N1283CH46K00
| Model | N1283CH46K00 |
| Description | Silicon Controlled Rectifier, 6620000mA I(T), 4600V V(DRM), |
| PDF file | Total 9 pages (File size: 102K) |
| Chip Manufacturer | LITTELFUSE |
WESTCODE
Positive development in power electronics
5.2 Calculating V
T
using ABCD coefficients
N1283CH43 to N1283CH52
V
T
=
A
+
B
. ln(
I
T
)
+
C
.
I
T
+
D
.
I
T
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics where possible. The resulting values for V
T
agree with the true device characteristic over a
current range, which is limited to that plotted.
125°C Coefficients
A
B
C
D
25°C Coefficients
0.545447122
0.06095875
-4
1.872716×10
-5
-1.417852×10
Term
rp
τ
p
1.125391
Term
rp
τ
p
8.929845
Types N1283CH43-52 Provisional Rating Report 99T03AD Issue 3
Where
p
= 1 to n, n is the number of terms in the series.
where:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
−
t
1
−
e
τ
p
r
t
=
∑
r
p
p
=
1
p
=
n
5.3 D.C. Thermal impedance calculation
D.C. Double Side Cooled
1
2
3
-3
-3
-4
3.424745×10
1.745273×10
8.532017×10
0.1878348
0.02788979
A
B
C
D
D.C. Single Side Cooled
1
2
3
-3
-3
-3
8.375269×10
2.518437×10
1.193758×10
0.4711304
0.08221244
page 4 of 9
0.8560119
0.06109782
-4
1.922791×10
-3
-4.777063×10
The on-state characteristic I
T
vs. V
T
, on Fig. 9, is represented in two ways;
(i)
the well established V
0
and r
S
tangent and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
4
-4
3.457329×10
8.430889×10
-3
4
-4
7.45432×10
0.01221961
November, 2000
