N1283CH50
| Model | N1283CH50 |
| Description | Silicon Controlled Rectifier, 7317A I(T)RMS, 6620000mA I(T), 5000V V(DRM), 5000V V(RRM), 1 Element, 101A322, 3 PIN |
| PDF file | Total 9 pages (File size: 102K) |
| Chip Manufacturer | IXYS |
WESTCODE
Positive development in power electronics
N1283CH43 to N1283CH52
18000
140
16000
180°
30°
60°
90°
120°
120
14000
12000
10000
8000
6000
4000
20
N1283CH43-52
99T03AD Issue 3
4000
Maximum permissable heatsink temperature (°C)
100
80
60
40
30°
60°
90°
120°
180°
Maximum forward dissipation (W)
2000
0
0
1000
0
2000
3000
5000
0
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 7 – On-state current vs. Power dissipation -
Double Side Cooled (Square wave)
18000
Figure 8 – On-state current vs. Heatsink
temperature - Double Side Cooled (Square wave)
140
N1283CH43-52
99T03AD Issue 3
16000
30°
60°
90° 120°
180°
270°
d.c.
120
14000
Maximum permissible heatsink temperature (°C)
100
Maximum forward dissipation (W)
12000
10000
80
8000
60
6000
40
4000
20
2000
N1283CH43-52
99T03AD Issue 3
6000
7000
0
0
0
1000
2000
3000
4000
5000
6000
7000
0
1000
2000
3000
4000
5000
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Types N1283CH43-52 Provisional Rating Report 99T03AD Issue 3
page 6 of 9
N1283CH43-52
99T03AD Issue 3
1000
2000
3000
4000
5000
30°
60° 90° 120°
180°
270° d.c.
November, 2000
Figure 5 – On-state current vs. Power dissipation –
Double Side Cooled (Sine wave)
Figure 6 – On-state current vs. Heatsink
temperature - Double Side Cooled (Sine wave)
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 N1283CH50GOO
|
Silicon Controlled Rectifier, 7317 A, 5000 V, SCR, 101A322, 3 PIN | IXYS | Preview |
|
N1283CH50H00
|
Silicon Controlled Rectifier, 6620000mA I(T), 5000V V(DRM), | LITTELFUSE | Preview |
|
N1283CH50J00
|
Silicon Controlled Rectifier, 6620000mA I(T), 5000V V(DRM), | IXYS | Preview |
