NE3503M04
| Model | NE3503M04 |
| Description | NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET |
| PDF file | Total 7 pages (File size: 397K) |
| Chip Manufacturer | CEL |
NEC's C TO Ku BAND
SUPER LOW NOISE AND NE3503M04
HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• SUPER LOW NOISE FIGURE AND
HIGH ASSOCIATED GAIN:
NF = 0.55 dB TYP., G
a
= 11.5 dB TYP. @ V
DS
= 2 V,
I
D
= 10 mA, f = 12 GHz
• FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
(M04) PACKAGE:
• GATE WIDTH:
W
g
= 160
μm
M04 PACKAGE
APPLICATIONS
• DBS LNB gain-stage, Mix-stage
• Low noise amplifier for microwave communication
system
ORDERING INFORMATION
PART NUMBER
NE3503M04-A
NE3503M04-T2-A
QUANTITY
50 pcs (Non reel)
3 kpcs/reel
PACKAGE
4-Pin thin-type
super minimold
(Pb-Free)
MARKING
V75
SUPPLYING FORM
•
8 mm wide embossed taping
•
Pin 1 (Source), Pin 2 (Drain) face the perforation side
of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3503M04-A
ABSOLUTE MAXIMUM RATINGS
(T
A
= +25°C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
RATINGS
4.0
−3.0
I
DSS
80
125
+125
−65
to +125
UNIT
V
V
mA
μA
mW
°C
°C
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 NE3503M04-A
|
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET | CEL | Preview |
|
NE3503M04-T2-A
|
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET | CEL | Preview |
