NE66719
| Model | NE66719 |
| Description | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| PDF file | Total 8 pages (File size: 107K) |
| Chip Manufacturer | CEL |
2
NF
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MAG = S
21
(
K- (K
2
-1)
)
S
12
5. MSG =
S
21
S
12
RF
California Eastern Laboratories
0.15
-0.05
+0.1
0.3
-0
+0.1
DESCRIPTION
0.5
+0.1
UB
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 NE66719-T1
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | CEL | Preview |
