NZT6717
| Model | NZT6717 |
| Description | NPN General Purpose Amplifier |
| PDF file | Total 4 pages (File size: 118K) |
| Chip Manufacturer | FAIRCHILD |
TN6717A / NZT6717
Discrete POWER & Signal
Technologies
TN6717A
NZT6717
C
E
C
C
TO-226
B
E
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 39.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80
80
5.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TN6717A
1.0
8.0
50
125
Max
*NZT6717
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
©
1997 Fairchild Semiconductor Corporation
Related PDFs
| Model | Description | Manufacturer | Operation |
|---|---|---|---|
 NZT6717/L99Z
|
1200mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261 | TI | Preview |
