OBTS149
| Model | OBTS149 |
| Description | Smart Lowside Power Switch |
| PDF file | Total 10 pages (File size: 141K) |
| Chip Manufacturer | INFINEON |
HITFET
®
BTS 149
Smart Lowside Power Switch
Features
•
Logic Level Input
•
Input Protection (ESD)
•
Thermal Shutdown
•
Overload protection
•
Short circuit protection
•
Overvoltage protection
•
Current limitation
•
Status feedback with external input resistor
•
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(lim)
I
D(ISO)
E
AS
60
18
30
19
V
mΩ
A
A
6000 mJ
Application
•
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
•
µC compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
®
chip on chip tech-
nology. Fully protected by embedded protected functions.
V bb
+
LOAD
M
Drain
2
dv/dt
limitation
Current
lim itation
Overvoltage
protection
1
IN
ESD
Overload
protection
Over-
temperature
protection
Short circuit
Short circuit
protection
protection
Source
3
HI TFET
®
Semiconductor Group
Page 1
13.07.1998
