OD-880F
| Model | OD-880F |
| Description | HIGH POWER GAAIAS IR EMITTERS |
| PDF file | Total 2 pages (File size: 76K) |
| Chip Manufacturer | ETC |
HIGH-POWER GaAlAs IR EMITTERS
1.00
MIN.
GLASS
DOME
OD-880F
FEATURES
ANODE
(CASE)
.209
.212
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
.041
.015
.183
.186
.152
.154
.100
• Narrow angle for long distance applications
• OD-880F1 selected to meet minimum radiant intensity
.017
.030
.040
CATHODE
.197
.205
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Radiant Intensity, I
e
OD-880F
OD-880F1
OD-880F
OD-880F1
TEST CONDITIONS
I
F
= 100mA
120
I
F
= 50mA
I
F
= 100mA
I
R
= 10µA
V
R
= 0V
5
MIN
15
TYP
17
8
135
160
880
80
8
1.55
30
17
0.5
0.5
1.9
MAX
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
Peak Emission Wavelength,
λ
P
Spectral Bandwidth at 50%,
∆λ
Half Intensity Beam Angle,
θ
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
1
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
-55°C to 100°C
100°C
350°C/W Typical
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
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