OHE940CC
| Model | OHE940CC |
| Description | High-Power GaAs IRED mounted in durable,hermetically sealed TO-18 metal can Package |
| PDF file | Total 2 pages (File size: 160K) |
| Chip Manufacturer | ETC |
OHE940CC
under demanding conditions such as use outdoor.
INFRARED EMITTING DIODES
The
OHE940CCis
a high-power GaAs IRED mounted in durable,hermetically sealed
TO-18 metal can package, which provides years of reliable performance even
FEATURES
● Narrow beam angle
● Durable
● High reliability in demanding environments
APPLICATIONS
● Optical emitters
● Optical switches
● Smoke sensors
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Symbol
V
F
I
R
C
T
Po
λp
Δλ
Δθ
Cond.
IF=100㎃
VR=5v
f=1MHz
IF=100㎃
IF=100㎃
IF=100㎃
25
15.0
940
50
±9
( Ta=25℃ )
( Ta=25℃ )
Min.
Typ.
1.3
Max.
1.7
10
Unit
V
㎂
pF
mW/sr
㎚
㎚
deg.
MAXIMUM RATINGS
Item
Reverse voltage
Forward current
Pulse forward current
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
(1)
Symbol
V
R
I
F
I
FP
P
d
Topr
Tstg
Tsol
Rating
5
100
1
200
-40∼+100
-55∼+125
260
Unit
V
㎃
A
mW
℃
℃
℃
(1)For MAX.5seconds at the position of 2mm from the package
1
OPTO HiTEC.Co.,Ltd.
