OHT10CB
| Model | OHT10CB |
| Description | Photo transistors |
| PDF file | Total 2 pages (File size: 136K) |
| Chip Manufacturer | ETC |
OHT10CB
The
OHT10CB
is a high-sensitivity NPN silicon phototransistor
mounted in durable, hermetically sealed TO-18 metal can which provide years
of reliable performance, even under demanding conditions such as use outdoors.
P
hoto
transistors
FEATURES
● Narrow angular response
● Durable
● High reliability in demanding environments
● Two leads( Collector, Emitter )
APPLICATIONS
● Optical counters
● Optical detectors
● Infrared sensors
● Encoders
● Smoke detectors
ELECTRO-OPTICAL CHARACTERISTICS
Item
Collector dark current
Light current
C-E saturation voltage
Switching speeds
Rise time
Fall time
Symbol
I
CEO
I
L
V
ce
(sat)
tr
tf
λ
λp
Δθ
Cond.
V
CEO
=10V
V
CE
=10v,200Lux
Ic=5㎃,2000Lux
Vcc=10v,Ic=5㎃
RL=100Ω
( Ta=25℃ )
Min.
1.5
Typ.
1
6.0
0.2
8.0
10
500~1,050
880
±15
(Ta=25℃)
Max.
200
16
0.4
Unit
㎁
㎃
V
usec.
usec.
㎚
㎚
deg.
Spectral sensitivity
Peak wavelenght
Half angle
MAXIMUM RATINGS
Item
C-E voltage
E-C voltage
Collector current
Collector power dissipation
Operating temp.
Storage temp.
Soldering temp.
(1)
Symbol
V
CEO
V
ECO
Ic
P
D
Topr.
Tstg.
Tsol.
Rating
40
4
50
150
-30∼+125
-50∼+150
260
Unit
V
V
㎃
mW
℃
℃
℃
(1)For MAX.5seconds at the position of 2mm from the package
1
OPTO HiTEC.Co.,Ltd.
