P0102BL5AA4
| Model | P0102BL5AA4 |
| Description | 0.25A SCRs |
| PDF file | Total 5 pages (File size: 87K) |
| Chip Manufacturer | STMICROELECTRONICS |
P0102BL
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
0.30
0.28
α
= 180 °
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
360 °
0.08
0.06
0.04
α
0.02
IT(av)(A)
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
Fig. 2:
Average and D.C. on-state current versus
ambient temperature.
IT(av)(A)
0.30
0.25
0.20
0.15
0.10
0.05
Tamb(°C)
0.00
0
25
50
75
100
125
α
= 180°
D.C
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]
6
5
4
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
3
2
1
tp(s)
IGT
IH & IL
(Rgk = 1k
Ω)
Tj(°C)
-20
0
20
40
60
80
100
120
140
0.01
1E-2
1E-1
1E+0
1E+1
1E+2
0
-40
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1k
Ω
]
20
18
16
14
12
10
8
6
4
2
0
1E-2
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk = 1k
Ω
]
10.0
1.0
Rgk(kΩ)
1E-1
1E+0
1E+1
0.1
0
0.2
0.4
0.6
0.8
Rgk(kΩ)
1.0
1.2
1.4
1.6
1.8
2.0
3/5
