P0111BN5XA4
| Model | P0111BN5XA4 |
| Description | SILICON CONTROLLED RECTIFIER,200V V(DRM),500MA I(T),SOT-223 |
| PDF file | Total 6 pages (File size: 61K) |
| Chip Manufacturer | STMICROELECTRONICS |
P01xxxN
Fig.7 :
Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
®
10ms, and
corresponding value of I
2
t.
I
TSM
(A). I
2
t (A
2
s)
Fig.8 :
On-state characteristics (maximum val-
ues).
100
10
Tj initial = 25
o
C
I TM (A)
Tj initial
o
25 C
I TSM
10
1
Tj max
1
I
2
t
Tj max
Vto =0.95V
Rt =0.60 0
0.1
1
tp(ms)
VTM (V)
10
0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Fig.9 :
Relative variation of holding current versus
gate-cathode resistance (typical values).
Ih(Rgk)
Ih(Rgk=1k
)
Tj=25
o
C
5.0
1.0
Rgk( )
0.1
1. 0E+ 00 1. 0E+ 01 1.0 E+ 02 1 . 0E+ 03 1 .0 E+0 4 1 .0 E+0 5 1. 0E+0 6
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