P0300Q12BLRP
| Model | P0300Q12BLRP |
| Description | Q2L Series SIDACtor Device |
| PDF file | Total 4 pages (File size: 420K) |
| Chip Manufacturer | LITTELFUSE |
Q
2L
Series SIDACtor
®
Device
Surge Ratings
Series
2x10µs
Amps
Min
A
B
150
250
1.2x50µs/8x20µs
Amps
Min
150
250
Ipp
10x160µs
Amps
Min
90
150
10x560µs
Amps
Min
50
100
10x1000µs
Amps
Min
45
80
ITSM
AC 60Hz
Amps
Min
20
20
Amps/µs
Max
500
500
di/dt
Thermal Considerations
Package
QFN
Symbol
TJ
TS
PIN
1
PIN 2
Data Sheets
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
-40 to +150
-65 to +150
120
Unit
°C
°C
°C/W
R
0JA
V-I: Characteristics
+I
V-I: Pulse Wave-form
I
PP
– Peak Pulse Current – %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
I
T
I
S
I
H
100
Peak
Value
Waveform = t
r
x t
d
-V
I
DRM
V
T
V
DRM
+V
50
Half Value
V
S
0
0
-I
t
r
t
d
t – Time (µs)
V-I: Junction Temperature
14
12
10
8
6
4
2
0
-4
-6
-8
-40 -20
0
20 40 60 80 100 120 140 160
V-I: Holding Current/Case Temperature
Percent of V
S
Change – %
I
H
(T
C
= 25 ˚C)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0
20 40 60 80 100 120 140 160
I
H
25 ˚C
25 ˚C
Ratio of
Case Temperature (T
C
) – ˚C
Junction Temperature (T
J
) – ˚C
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2
©2005 Littelfuse • Telecom Design Guide
