PZT651T1
| Model | PZT651T1 |
| Description | HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT |
| PDF file | Total 6 pages (File size: 105K) |
| Chip Manufacturer | ONSEMI |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT651T1/D
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
•
High Current: 2.0 Amp
•
The SOT–223 package can be soldered using wave or reflow.
•
SOT–223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility
of damage to the die.
•
Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
•
PNP Complement is PZT751T1
COLLECTOR 2,4
PZT651T1
Motorola Preferred Device
SOT–223 PACKAGE
HIGH CURRENT
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
BASE
1
EMITTER 3
CASE 318E–04, STYLE 1
TO–261AA
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
60
80
5.0
2.0
0.8
6.4
– 65 to 150
150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
DEVICE MARKING
651
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction–to–Ambient in Free Air
Maximum Temperature for Soldering Purposes
Time in Solder Bath
Symbol
R
θJA
TL
Max
156
260
10
Unit
°C/W
°C
Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
©
Motorola, Inc. 1996
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
