PZTA27
| Model | PZTA27 |
| Description | NPN General Purpose Amplifier |
| PDF file | Total 4 pages (File size: 46K) |
| Chip Manufacturer | FAIRCHILD |
MPSA27/PZTA27
MPSA27/PZTA27
NPN General Purpose Amplifier
• This device is designed for applications requiring
extremely high current gain at collector currents to
500mA.
• Sourced from process 03.
• See MPSA28 for characteristics.
4
3
2
TO-92
1
1. Emitter 2. Base 3. Collector
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Operating and Storage Junction Temperature
Parameter
Value
60
60
10
800
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 100µA, V
BE
= 0
I
C
= 10µA, I
C
= 0
I
C
= 100µA, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, V
BE
= 0
V
EB
= 10V, I
C
= 0
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V,
f = 100MHz
125
10000
10000
1.5
2.0
V
V
MHz
Min.
60
60
10
100
500
100
Typ.
Max.
Units
V
V
V
nA
nA
nA
Off Characteristics
Collector-Emitter Breakdown Voltage
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
On Characteristics
Small Signal Characteristics
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
MPSA27
625
5.0
83.3
200
125
*PZTA27
1000
8.0
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm: mounting pad for the collector lead min. 6cm.
©2002 Fairchild Semiconductor Corporation
Rev. A1, June 2002
