Q2004F31V
| Model | Q2004F31V |
| Description | Thyristor Product Catalog |
| PDF file | Total 224 pages (File size: 3M) |
| Chip Manufacturer | TECCOR |
Application Notes
AN1006
8. Set
Power Dissipation
to
2.2 W.
(2
W
on 370) For sensitive
SCRs, set at 0.5 W. (0.4
W
on 370)
9. Set
Horizontal
knob to
2 V/DIV.
10. Set
Vertical
knob to
50 mA/DIV.
11. Increase
Variable Collector Supply Voltage
until voltage
reaches 12 V on CRT.
12. After 12 V setting is completed, change
Horizontal
knob to
Step Generator.
Procedure 9:
GT
will be numerically displayed on screen
under offset value.)
PER
V
E
R
T
DIV
50
mA
PER
H
O
R
I
Z
DIV
Procedure 7: I
GT
To measure the I
GT
parameter:
1. Set
Step/Offset Amplitude
to 20% of maximum rated I
GT
.
Note: R
GK
should be removed when testing I
GT
.
2. Set
Left-Right Terminal Jack Selector
to correspond with
location of the test fixture.
3. Gradually increase
Offset Multiplier
until device reaches
the conduction point. (Figure AN1006.9) Measure I
GT
by fol-
lowing horizontal axis to the point where the vertical line
crosses axis. This measured value is I
GT
. (On 370, I
GT
will be
numerically displayed on screen under offset value.)
PER
PER
VGT
S
T
E
P
200
mV
()k
DIV
9m
PER
DIV
250m
Figure AN1006.10 V
GT
= 580 mV
Triacs
Triacs are full-wave bidirectional AC switches turned on when
current is supplied to the gate terminal of the device. If gate con-
trol in all four quadrants is required, then a sensitive gate triac is
needed, whereas a standard triac can be used if gate control is
only required in Quadrants I through III.
To connect the triac:
1. Connect the
Gate
to the
Base Terminal
(B).
2. Connect
MT1
to the
Emitter Terminal
(E).
3. Connect
MT2
to the
Collector Terminal
(C).
V
E
R
T
DIV
50
mA
PER
H
O
R
I
Z
DIV
PER
IGT
S
T
E
P
10
A
To begin testing, perform the following procedures.
()k
DIV
9m
PER
DIV
Procedure 1: (+)V
DRM
, (+)I
DRM
, (-)V
DRM
, (-)I
DRM
5 K
Note: The (+) and (-) symbols are used to designate the polarity
MT2 with reference to MT1.
To measure the (+)V
DRM
, (+)I
DRM
, (-)V
DRM
, and (-)I
DRM
parameter:
1. Set
Variable Collector Supply Voltage Range
to appropri-
ate
Max Peak Volts
for device under test. (Value selected
should be equal to the device’s V
DRM
rating.)
WARNING: Do NOT exceed V
DRM
/V
RRM
rating of SCRs, tri-
acs, or
Quadracs.
These devices can be damaged.
2. Set
Horizontal
knob to sufficient scale to allow viewing of
trace at the required voltage level. (The
100 V/DIV
scale
should be used for testing devices having a V
DRM
rating of
600 V or greater; the
50 V/DIV
scale for testing parts rated
from 30 V to 500 V, and so on.)
3. Set
Mode
to
Leakage.
4. Set
Polarity
to (+).
5. Set
Power Dissipation
to
0.5 W.
(0.4
W
on 370)
6. Set
Terminal Selector
to
Emitter Grounded-Open Base.
7. Set
Vertical
knob to ten times the maximum leakage current
(I
DRM
) specified for the device.
Note: The CRT screen readout should show 1% of the maxi-
mum leakage current. The vertical scale is divided by 1,000
when leakage mode is used.
Figure AN1006.9
I
GT
= 25 µA
Procedure 8: V
GT
To measure the V
GT
parameter:
1. Set
Offset Multiplier
to
0
(zero). (Press
Aid
and Oppose at
the same time on 370.)
2. Set
Step Offset Amplitude
to 20% rated V
GT
.
3. Set
Left-Right Terminal Jack Selector
to correspond with
location of test fixture.
4. Gradually increase
Offset Multiplier
until device reaches
the conduction point. (Figure AN1006.10) Measure V
GT
by
following horizontal axis to the point where the vertical line
crosses axis. This measured value is V
GT
. (On 370, V
GT
will
be numerically displayed on screen, under offset value.)
©2002 Teccor Electronics
Thyristor Product Catalog
AN1006 - 7
http://www.teccor.com
+1 972-580-7777
