Q2004J31V
| Model | Q2004J31V |
| Description | Thyristor Product Catalog |
| PDF file | Total 224 pages (File size: 3M) |
| Chip Manufacturer | TECCOR |
AN1001
Application Notes
Electrical Characteristic Curves of Thyristors
+I
+I
Voltage Drop (V
T
) at
Specified Current (i
T
)
I
T
I
H
Latching Current (I
L
)
R
S
I
S
Reverse Leakage
Current - (I
RRM
) at
Specified V
RRM
Off - State Leakage
Current - (I
DRM
) at
Specified V
DRM
Minimum Holding
Current (I
H
)
-V
I
DRM
I
BO
+V
V
BO
V
S
V
DRM
-V
+V
R
S =
Specified Minimum
Reverse Blocking
Voltage (V
RRM
)
Specified Minimum
Off - State
Blocking
Voltage (V
DRM
)
(V
BO
- V
S
)
(I
S
- I
BO
)
V
T
-I
Reverse
Breakdown
Voltage
Forward
Breakover
Voltage
-I
Figure AN1001.15
V-I Characteristics of a Sidac Chip
Figure AN1001.12
V-I Characteristics of SCR Device
Methods of Switching on Thyristors
Three general methods are available for switching thyristors to
on-state condition:
•
Application of gate signal
Static dv/dt turn-on
Voltage breakover turn-on
+I
Voltage Drop (V
T
) at
Specified Current (i
T
)
Latching Current (I
L
)
•
•
Off-state Leakage
Current – (I
DRM)
at
Specified V
DRM
Minimum Holding
Current (I
H
)
Application Of Gate Signal
Gate signal must exceed I
GT
and V
GT
requirements of the thyristor
used. For an SCR (unilateral device), this signal must be positive
with respect to the cathode polarity. A triac (bilateral device) can
be turned on with gate signal of either polarity; however, different
polarities have different requirements of I
GT
and V
GT
which must
be satisfied. Since diacs and sidacs do not have a gate, this
method of turn-on is not applicable. In fact, the single major
application of diacs is to switch on triacs.
-V
+V
Specified Minimum
Off-state
Blocking
Voltage (V
DRM
)
-I
Breakover
Voltage
Static dv/dt Turn-on
Static dv/dt turn-on comes from a fast-rising voltage applied
across the anode and cathode terminals of an SCR or the main
terminals of a triac. Due to the nature of thyristor construction, a
small junction capacitor is formed across each PN junction.
Figure AN1001.16 shows how typical internal capacitors are
linked in gated thyristors.
Figure AN1001.13
V-I Characteristics of Triac Device
+I
10 mA
∆V
Breakover
Current
I
BO
-V
+V
Breakover
Voltage
V
BO
Figure AN1001.16
-I
Internal Capacitors Linked in Gated Thyristors
Figure AN1001.14
V-I Characteristics of Bilateral Trigger Diac
http://www.teccor.com
+1 972-580-7777
AN1001 - 4
©2002 Teccor Electronics
Thyristor Product Catalog
