Q2004P31V
| Model | Q2004P31V |
| Description | Thyristor Product Catalog |
| PDF file | Total 224 pages (File size: 3M) |
| Chip Manufacturer | TECCOR |
Sidac
Data Sheets
Part No.
(10)
I
T(RMS)
(7) (8)
V
DRM
V
BO
(1)
I
DRM
I
BO
(2)
I
H
(3) (4)
Type
TO-92
DO-15X
TO-202
DO-214
Amps
MAX
1
1
1
1
1
1
1
1
1
1
1
1
Volts
MIN
±70
±90
±90
±90
±90
±90
±90
±180
±180
±190
±200
±200
MIN
79
95
104
110
120
130
140
190
205
220
240
270
Volts
MAX
97
113
118
125
138
146
170
215
230
250
280
330
µAmps
MAX
5
5
5
5
5
5
5
5
5
5
5
5
µAmps
MAX
10
10
10
10
10
10
10
10
10
10
10
10
mAmps
TYP
60
60
60
60
60
60
60
60
60
60
60
60
MAX
150
150
150
150
150
150
150
150
150
150
150
150
See “Package Dimensions” section for variations. (9)
K0900E70
K0900G
K0900S
K1050E70
K1100E70
K1200E70
K1300E70
K1400E70
K1500E70
K2000E70
K2200E70
K2400E70
K2500E70
K1050G
K1100G
K1200G
K1300G
K1400G
K1500G
K2000G
K2200G
K2400G
K2500G
K2000F1
K2200F1
K2400F1
K2500F1
K3000F1
K1050S
K1100S
K1200S
K1300S
K1400S
K1500S
K2000S
K2200S
K2400S
K2500S
Specific Test Conditions
di/dt
— Critical rate-of-rise of on-state current
dv/dt
— Critical rate-of-rise of off-state voltage at rated V
DRM
;
T
J
≤
100 °C
I
BO
— Breakover current 50/60 Hz sine wave
I
DRM
— Repetitive peak off-state current 50/60 Hz sine wave; V = V
DRM
I
H
— Dynamic holding current 50/60 Hz sine wave; R = 100
Ω
I
T(RMS)
— On-state RMS current T
J
≤
125 °C 50/60 Hz sine wave
I
TSM
— Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
R
S
— Switching resistance
R
Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
See Figure E9.5 for V
BO
change versus junction temperature.
See Figure E9.6 for I
BO
versus junction temperature.
See Figure E9.2 for I
H
versus case temperature.
See Figure E9.13 for test circuit.
See Figure E9.1 for more than one full cycle rating.
T
C
≤
90 °C for TO-92 Sidac
T
C
≤
105 °C for TO-202 Sidacs
T
L
≤
100 °C for DO-15X
T
L
≤
90 °C for DO-214
See Figure E9.14 for clarification of sidac operation.
For best sidac operation, the load impedance should be near or
less than switching resistance.
See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(
V BO
–
V S
)
= -------------------------------
50/60 Hz sine wave
-
S
(
I
–
I
BO
)
S
(7)
(8)
(9)
V
BO
— Breakover voltage 50/60 Hz sine wave
V
DRM
— Repetitive peak off-state voltage
V
TM
— Peak on-state voltage; I
T
= 1 A
(10) Do not use electrically connected mounting tab or center lead.
+I
I
T
I
H
I
S
I
DRM
I
BO
+V
V
BO
V
S
V
DRM
R
S
General Notes
•
•
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
Storage temperature range (T
S
) is -65 °C to +150 °C.
The case (T
C
) or lead (T
L
) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
Junction temperature range (T
J
) is -40 °C to +125 °C.
Lead solder temperature is a maximum of +230 °C for 10-second
maximum;
≥1/16"
(1.59 mm) from case.
R
S =
(V
BO
- V
S
)
(I
S
- I
BO
)
-V
•
•
V
T
-I
V-I Characteristics
http://www.teccor.com
+1 972-580-7777
E9 - 2
©2002 Teccor Electronics
Thyristor Product Catalog
