Q2004V4
| Model | Q2004V4 |
| Description | Triacs (0.8 A to 35 A) |
| PDF file | Total 10 pages (File size: 231K) |
| Chip Manufacturer | LITTELFUSE |
Data Sheets
Triacs
V
TM
(1) (5)
V
GT
(2) (6) (15)
(18) (19)
I
H
(1) (8) (12)
I
GTM
(14)
P
GM
(14)
P
G(AV)
I
TSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
t
gt
(10) (17)
I
2
t
di/dt
Volts
T
C
= 25 °C
MAX
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.8
1.8
1.8
1.8
1.8
1.4
1.4
1.5
1.5
Volts
T
C
= 25 °C
MAX
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.75
2.75
2.75
2.75
mAmps
MAX
35
35
35
35
35
50
50
50
50
50
70
70
70
70
70
100
100
100
100
100
50
50
50
50
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
2
2
2
2
2
2
2
2
2
2
2
2
2
2
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Amps
Watts
Watts
Amps
60/50 Hz
120/100
120/100
120/100
120/100
120/100
120/100
120/100
120/100
120/100
120/100
200/167
200/167
200/167
200/167
200/167
200/167
200/167
200/167
200/167
200/167
250/220
250/220
350/300
350/300
Volts/µSec
TYP
2
2
2
2
2
4
4
4
4
4
4
4
4
4
4
5
5
5
5
5
5
5
5
5
Volts/µSec
T
C
=
100 °C
150
150
100
75
50
350
350
300
250
150
400
400
350
300
200
400
400
350
300
200
550
450
550
450
475
400
475
400
275
275
225
200
275
275
225
200
225
225
200
175
T
C
=
125 °C
µSec
TYP
3
3
3
3
3
3
3
3
3
3
4
4
4
4
4
4
4
4
4
4
3
3
3
3
60
60
60
60
60
60
60
60
60
60
166
166
166
166
166
166
166
166
166
166
260
260
508
508
70
70
70
70
70
70
70
70
70
70
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Amps
2
Sec
Amps/µSec
MIN
Electrical Specification Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
For either polarity of MT2 with reference to MT1 terminal
For either polarity of gate voltage (V
GT
) with reference to MT1
terminal
See Gate Characteristics and Definition of Quadrants.
See Figure E2.1 through Figure E2.7 for current rating at specific
operating temperature.
See Figure E2.8 through Figure E2.10 for i
T
versus v
T
.
See Figure E2.12 for V
GT
versus T
C
.
See Figure E2.11 for I
GT
versus T
C
.
See Figure E2.14 for I
H
versus T
C
.
See Figure E2.13 for surge rating with specific durations.
(15) R
L
= 60
Ω
for 0.8 A to10 A triacs; R
L
= 30
Ω
for 15 A to 35 A triacs
(16) T
C
= T
J
for test conditions in off state
(17) I
GT
= 300 mA for 25 A and 35 A devices
(18) Quadrants I, II, III only
(19) Minimum non-trigger V
GT
at 125 °C is 0.2 V for all except 50 mA
MAX QIV devices which are 0.2 V at 110 °C.
Gate Characteristics
Teccor triacs may be turned on between gate and MT1 terminals
in the following ways:
•
•
In-phase signals (with standard AC line) using Quadrants I
and III
Application of unipolar pulses (gate always positive or nega-
tive), using Quadrants II and III with negative gate pulses and
Quadrants I and IV with positive gate pulses
However, due to higher gate requirements for Quadrant IV, it
is recommended that only negative pulses be applied. If pos-
itive pulses are required, see “Sensitive Triacs” section of
this catalog or contact the factory. Also, see
Figure AN1002.8, “Amplified Gate” Thyristor Circuit.
(10) See Figure E2.15 for t
gt
versus I
GT
.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices,
400 mA dc for 15 A to 35 A devices
(13) See Figure E2.1 through Figure E2.6 for maximum allowable case
temperature at maximum rated current.
(14) Pulse width
≤10
µ
s;
I
GT
≤
I
GTM
©2004 Littelfuse, Inc.
Thyristor Product Catalog
E2 - 5
http://www.littelfuse.com
+1 972-580-7777
